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M5M4V64S30ATP-12 - 64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM

M5M4V64S30ATP-12_3173467.PDF Datasheet
 Full text search : 64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM

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PART Description Maker
GM72V66841CLT GM72V66841CT GM72V66841CT_CLT GM72V6 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
2097152 word x 8 bit x 4 bank synchronous dynamic RAM
 etc
LG Semicon Co.,Ltd.
LG Semiconductor
GM72V161621ET GM72V161621 GM72V161621ELT 524,288 word x 16 Bit x 2 Bank - SYNCHRONOUS DYNAMIC RAM(SDRAM)
524288 word x 16 Bit x 2 Bank SDRAM
 LG Semiconductor
List of Unclassifed Manufacturers
ETC
UPD4564323G5-A10-9JH UPD4564323G5-A60-9JH UPD45643 64M-bit Synchronous DRAM 4-bank/ LVTTL
64M-bit Synchronous DRAM 4-bank, LVTTL 6400位同步DRAM 4银行，LVTTL
 NEC Corp.
NEC, Corp.
MR26V25605J MR26V25605J-XXXMB 8M-Word x 32Bit or 64M-Word x 16Bit P2ROM
8M-Word x 32-bit or 16M-Word x 16-BIt P2ROM
 OKI electronic components
OKI Semiconductor
OKI[OKI electronic componets]
K8S6415EBB (K8S6415ExB) 64M Bit Multi Bank NOR Flash Memory
 Samsung semiconductor
K8D6316UTM-PC07 K8D6316UTM-PC08 K8D6316UTM-PC09 K8 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
 SAMSUNG[Samsung semiconductor]
K8D6316UBM-LC09 K8D6316UBM-LI09 K8D6316UBM-PI07 K8 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
 SAMSUNG SEMICONDUCTOR CO. LTD.
K8S6415EBB-DE7C K8S6415EBB-DC7C K8S6415EBB-FE7C K8 64M Bit (4M x16) Muxed Burst , Multi Bank NOR Flash Memory
 http://
M5M5V208AKR M5M5V208AKV D99016 M5M5V208AKR-55LW 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM
From old datasheet system
 Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
UPD23C64040JL UPD23C64040JLGX-XXX UPD23C64040JLGY- 64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT (BYTE MODE) / 4M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE
 NEC[NEC]
M5M5V208AKV M5M5V208AKV-55HI M5M5V208AKV-70HI Memory>Low Power SRAM
2097152-BIT(262144-WORD BY 8-BIT)CMOS STATIC RAM
 Renesas Electronics Corporation
 
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